Spectra associated with stacking faults in 4H-SiC grown in a hot-wall CVD reactor

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 589-592

  Bai, S ^a   Wagner, G ^b   Shishkin, E ^a   Choyke, W J ^a   Devaty, R P ^a   Zhang, M ^c   Pirouz, P ^c   Kimoto, T ^d  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c CASE WESTERN RESERVE UNIVERSITY   (United States)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

Hot wall CVD; Photoluminescence; Polytypes; Stacking faults

Indexed keywords

ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS;

CVD REACTORS; EXCITON SPECTRA; HOT WALL; HOT-WALL REACTORS; POLYTYPES;

SILICON CARBIDE;

EID: 0013320102     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/wwwwscientific.net/MSF.389-393.589     Document Type: Conference Paper

References (1)

1. J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindcfell and P. Skytt, Materials Science Forum Vols. 353-356 (2001) pp. 299-302