Structure of SiC-quantum wells studied by TEM and CBED

Crystal Research and Technology

Volumn 37, Issue 5, 2002, Pages 466-476

  Kaiser, U ^a   Kups, Th ^a   Fissel, A ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Convergent beam electron diffraction; Heterostructures; Lattice parameter; SiC; TEM

Indexed keywords

CRYSTAL DEFECTS; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; STRAIN RATE; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036076808     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200205)37:5<466::AID-CRAT466>3.0.CO;2-I     Document Type: Article

References (24)

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2. Analysis of local strain in aluminium interconnects by energy filtered CBED
3. Using the Hough transform for HOLZ line identification in convergent beam electron diffraction
4. Lattice parameter measurements of 3C-SiC thin films grown on 6H-SiC(0001) substrate crystals
5. Determination of multiple lattice parameters from convergent-beam electron diffraction patterns
6. Refinement of crystal structure parameters using convergent-beam electron diffraction: The low temperature phase of SrTiO3
7. Convergent beam electron diffraction measurement for local strain distribution in Si around NiSi2 island
8. Quantitative determination of lattice parameters from CBED patterns: Accuracy and performance
9. Effect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers
10. A new approach of the lattice parameter measurements using dynamic electron