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Physica Status Solidi C: Conferences

Volumn 2, Issue 6, 2005, Pages 1792-1796

Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC

(5) Ottaviani, L a Idrissi, H a Hidalgo, P b Lancin, M a Pichaud, B a

a AIX MARSEILLE UNIVERSITY (France)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; COMPRESSIVE STRESS; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; GROWTH KINETICS; HYDROGEN; STACKING FAULTS; SUBSTRATES; THERMAL EFFECTS; VECTORS;

BARRIER HEIGHTS; BURGERS VECTOR; RADIATIVE RECOMBINATION LEVELS; SHOCKLEY PARTIAL DISLOCATIONS;

SILICON CARBIDE;

EID: 27444441593 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200460505 Document Type: Conference Paper

Times cited : (9)

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