Comparative studies of <0001> 4H-SIC layers grown with either Silane or HexaMethylDiSilane / Propane precursor systems

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 217-220

  Sartel, C ^a   Balloud, C ^b   Souliere V ^a   Juillaguet, S ^b   Dazord, J ^a   Monteil, Y ^a   Camassel, J ^b   Rushworth, S ^c  

^a UNIVERSITÉ LYON 1   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c Epichem Ltd   (United Kingdom)

Author keywords

4H SIC; CVD; Growth rate; HexaMethylDiSilane (HMDS); Operating windows; Silane

Indexed keywords

CHARGE COUPLED DEVICES; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EPITAXIAL GROWTH; MIXTURES; MORPHOLOGY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON CARBIDE;

4H-SIC; GROWTH RATE; HEXAMETHYLDISILANE (HMDS); OPERATING WINDOWS;

SILANES;

EID: 4644371645     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.217     Document Type: Conference Paper

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