Photosensitivity analysis of gallium nitride and silicon carbide terahertz IMPATT oscillators: Comparison of theoretical reliability and study on experimental feasibility

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 3, 2008, Pages 608-620

  Mukherjee, Moumita ^a   Mazumder, Nikatan ^b   Roy, Sitesh Kumar ^a  

^a Inst of Radio Physics Electronics   (India)

^b International Institute of Information Technology Kolkata   (India)

Author keywords

4H SiC; High power; Optical modulation; Parasitic series resistance; Photosensitivity; Single drift region (SDR) impact avalanche transit time (IMPATT); Terahertz device; Top mounted (TM) diode; Wz GaN

Indexed keywords

AVALANCHE DIODES; AVALANCHES (SNOWSLIDES); CIVIL AVIATION; DIODES; EXPERIMENTS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; IMPACT RESISTANCE; INFORMATION RETRIEVAL; LIGHT SENSITIVE MATERIALS; MODULATION; NEGATIVE RESISTANCE; NITRIDES; OPTICAL PROPERTIES; OSCILLATORS (ELECTRONIC); PHOTOSENSITIVITY; RELIABILITY; RELIABILITY ANALYSIS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SNOW; TRANSIT TIME DEVICES; ZINC SULFIDE;

4H-SIC; HIGH POWER; OPTICAL MODULATION; PARASITIC SERIES RESISTANCE; SINGLE-DRIFT-REGION (SDR) IMPACT AVALANCHE TRANSIT TIME (IMPATT); TERAHERTZ DEVICE; WZ-GAN;

IMPATT DIODES;

EID: 54949128290     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.2002358     Document Type: Conference Paper

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