Ni-Al ohmic contact to p-type 4H-SiC

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 626-631

  Vang, H ^a,b   Lazar, M ^a   Brosselard, P ^a   Raynaud, C ^a   Cremillieu, P ^c   Leclercq, J L ^c   Bluet, J M ^d   Scharnholz, S ^b   Planson, D ^a  

^a Univ Claude Bernard Lyon1   (France)

^b FRENCH GERMAN RESEARCH INSTITUTE OF SAINT LOUIS   (France)

^c Lab Electron Optoelectronique M   (France)

^d UNIVERSITÉ DE LYON   (France)

Author keywords

Ni Al; Ohmic contact; p type; SiC; Specific resistance

Indexed keywords

DOPING (ADDITIVES); ELECTRIC RESISTANCE; NICKEL ALLOYS; RAPID THERMAL ANNEALING; SILICON CARBIDE;

ARGON ATMOSPHERE; CONTACT RESISTANCE; DOPING CONCENTRATION;

OHMIC CONTACTS;

EID: 33845295498     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.08.004     Document Type: Article

References (14)

1. R.C. Clarke, C.D. Brandt, S. Sriram, R.R. Siergiej, A.W. Morse, A.K. Agarwal, L.S. Chen, V. Balakrishna, A.A. Burk, High-temperature Electronic Materials, Devices and Sensors Conference, 1998, p. 18
2. Morkoc H., Strite S., Gao G.B., Lin M.E., Sverdlov B., and Burns M. Journal of Applied Physics 76 (1994) 1363
3. Crofton J., Mohney S.E., Williams J.R., and Isaacs-Smith T. Solid State Electronics 46 (2002) 109
4. Crofton J., Beyer L., Williams J.R., Luckowski E.D., Mohney S.E., and Delucca J.M. Solid State Electronics 41 (1997) 1725
5. Johnson B.J., and Capano M.A. Journal of Applied Physics 95 (2004) 5616
6. Pecz B., Toth L., di Forte-Poisson M.A., and Vacas J. Applied Science Surface 206 (2003) 8
7. Lee S.-K., Zetterling C.-M., Ostling M., Palmquist J.-P., Hogberg H., and Jansson U. Solid State Electronics 44 (2000) 1179
8. Yang S.J., Kim C.K., Noh I.H., Jang S.W., Jung K.H., and Cho N.I. Diamond and Related Materials 13 (2004) 1149
9. Konishi R., Yasukochi R., Nakatsuka O., Koide Y., Moriyama M., and Murakami M. Materials Science and Engineering B 98 (2003) 286
10. Marinova Ts., Yakimova R., Krastev V., Hallin C., and Janzen E. Journal of Vacuum Science and Technology B 14 (1996) 3252
11. Lazar M., Raynaud C., Planson D., Locatelli M.-L., Isoird K., Ottaviani L., Chante J.-P., Nipoti R., Poggi A., and Cardinali G. Materials Science Forum (2002) 389
12. Jernigan G.G., Stahlbush R.E., and Saks N.S. Applied Physics Letters 77 (2000) 1437
13. Afanas'ev V.V. Microelectronics Engineering 48 (1999) 241
14. Gao Y., Tang Y., Hoshi M., and Chow T.P. Solid State Electronics 44 (2000) 1875