Effect of ionizing radiation on the silicon IMPATT diode characteristics

Turkish Journal of Physics

Volumn 23, Issue 6, 1999, Pages 985-988

  Tagaev, M B ^a  

^a KARAKALPAK STATE UNIVERSITY   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 7644244186     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. V.S. Vavilov, B.M. Gorin, N.S. Danilin, A.E. Kiv, Yu L. Nurov and V.I. Shakhovtsov, Radiation Methods in Solid-State Electronics (in Russian), Radio i Svyaz', Moscow, 1990.
2. G.Z. Nemtsev, A.I. Pekarev, Yu D. Chistyakov and A.N. Burmistrov, Zarubezhnaya Elektronnaya Tekhnika, No: 11 (245) (1981) 3.
3. R.V. Konakova, Yu A. Tkhorik and L.S. Khazan, Elektronnaya Tekhnika, Ser.2 (Poluprovodnikovye Pribory), No.2 (193) (1988) 47.
4. I.E. Ermolovich, V.V. Milenin, R.V. Konakova, I.V. Prokopenko and V.L. Gromashevskii, Pis'ma v ZhTF, 22 (1996) 33.
5. Effect of Penetrating Radiation on the Electronic Industry Products (in Russian), ed. E.A. Ladygin (Sovetskoe Radio, Moscow, 1980).
6. A.S. Tager and V.M. Val'd-Perlov, IMPATT Diodes and their Microwave Application (in Russian) (Sovetskoe Radio, Moscow, 1968).