Deep SiC etching with RIE

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 388-392

  Lazar, M ^a   Vang, H ^a,b   Brosselard, P ^a   Raynaud, C ^a   Cremillieu, P ^c   Leclercq, J L ^c   Descamps, A ^d   Scharnholz, S ^b   Planson, D ^a  

^a Univ Claude Bernard Lyon1   (France)

^b FRENCH GERMAN RESEARCH INSTITUTE OF SAINT LOUIS   (France)

^c Lab Electron Optoelectronique M   (France)

^d UNIVERSITÉ DE LYON   (France)

Author keywords

Reactive ion etching; Silicon carbide; Surface morphology

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC POWER SYSTEMS; ELECTRIC REACTORS; OPTIMIZATION; REACTIVE ION ETCHING; SEMICONDUCTOR JUNCTIONS; TRENCHING;

GEOMETRY STRUCTURES; JUNCTION TERMINATION EXTENSION (JTE); POWER DEVICES; TRENCHING PHENOMENON;

SILICON CARBIDE;

EID: 33845187791     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.015     Document Type: Article

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