Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 70-73

  Pastor, D ^a   Ibaez J ^a   Cusco R ^a   Artus L ^a   Gonzilez Diaz G ^b   Calleja, E ^c  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; PHOTONS; RAMAN SCATTERING; RESONANCE; ULTRAVIOLET SPECTROSCOPY;

CRYSTAL QUALITY; GAN EPILAYERS; UV RAMAN SCATTERING;

GALLIUM NITRIDE;

EID: 34247215123     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/012     Document Type: Article

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