Technological challenges for manufacturing power devices in SiC

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 221-224

  Friedrichs, Peter ^a  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

Annealing; Contacts; JFET; Mosfet; Silicon carbide

Indexed keywords

HIGH-QUALITY INTERFACE; INDUSTRIAL SCALE; ION IMPLANTED; MOS-FET; POWER DEVICES; PROCESS FLOWS; TECHNOLOGICAL CHALLENGES;

ANNEALING; CONTACTS (FLUID MECHANICS); ELECTRIC EQUIPMENT; JUNCTION GATE FIELD EFFECT TRANSISTORS; MANUFACTURE; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE;

SILICON CARBIDE;

EID: 84887466857     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Jon Mark Hancock, "SiC Device Applications: Identifying and Developing Commercial Applications", Proceedings of the ICSCRM 2005, in press.
2. P. Friedrichs, H. Mitlehner, R. Schörner, K. Dohnke, R. Elpelt and D.Stephani, "The vertical silicon carbide JFET - A fast and low loss solid state power switching device", Proceedings of the EPE 2001, in Graz, Austria, August 2001, CD publication ISBN:90-75815-06-9.
3. James A. Cooper Jr. and Anant Agarwal, "SiC power switching devices - The second electronics revolution", Proceedings of the IEEE, VOL. 90, No. 6, June 2002, p.956.
4. A. Bauer et al, "Surface properties and electrical characteristics of rapid thermal annealed 4H-SiC", Material Science Forum, Volumes 433-436, pp. 609-612 (2003).
5. Negoro, Y.; Katsumoto, K.; Kimoto, T.; Matsunami, H., Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC (0001)", Journal of Applied Physics, Volume 96, Issue 1, pp. 224-228 (2004).
6. Matin M., Saha A., Cooper J. A., "A self-aligned process for highvoltage, short-channel vertical DMOSFETs in 4H-SiC", IEEE trans. electron devices, 2004, vol. 51, no10, pp. 1721-1725.
7. Peters, D., Schoerner, R., US patent US 6, 204, 135 B1.
8. Lee W.Y., Teng K.S., Wilks S.P.., "In-situ investigation of Carbon reduction an Ni/4H-SiC Interface using a silicon underlayer", Material Science Forum, Volumes 457-460, pp. 849-852 (2004).
9. Friedrichs P., Peters, D., Schoerner, R., US patent US 6, 815, 351 B2.
10. th Technical Symposium of the Electronic Journal Japan, Proceedings, pp138-149.