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Volumn , Issue , 2007, Pages

Radiation effect on a high efficiency double drift region 4H-SiC terahertz IMPATT diode

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; PHOTOSENSITIVITY; RADIATION EFFECTS; SILICON CARBIDE;

EID: 34748890474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMMT.2007.381459     Document Type: Conference Paper
Times cited : (6)

References (11)
  • 1
    • 18844409188 scopus 로고    scopus 로고
    • High-frequency solid-state electronic devices
    • May
    • R. J. Trew, "High-frequency solid-state electronic devices", IEEE Trans. Electron Dev., vol. 52, pp. 638-649, May 2005.
    • (2005) IEEE Trans. Electron Dev , vol.52 , pp. 638-649
    • Trew, R.J.1
  • 2
    • 0031144564 scopus 로고    scopus 로고
    • Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters
    • May
    • N.Mazumder and S.K.Roy, "Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters", Semicond Sci Technol, vol. 12, pp..623-630, May 1997
    • (1997) Semicond Sci Technol , vol.12 , pp. 623-630
    • Mazumder, N.1    Roy, S.K.2
  • 5
    • 0033886911 scopus 로고    scopus 로고
    • I.A. Khan and Jr. J. A. Cooper, Measurement of high field electron transport in silicon carbide, IEEE Trans. Electron Devices, 47, pp. 269-273, February 2000.
    • I.A. Khan and Jr. J. A. Cooper, "Measurement of high field electron transport in silicon carbide", IEEE Trans. Electron Devices, vol. 47, pp. 269-273, February 2000.
  • 6
    • 34748907575 scopus 로고    scopus 로고
    • www.cree.com
  • 7
    • 34748819100 scopus 로고    scopus 로고
    • H. Eisele and G. I. Haddad, Active microwave devices, in Microwave Semiconductor Device Physics, S. M. Sze, New York 1997, pp.343-407
    • H. Eisele and G. I. Haddad, Active microwave devices, in Microwave Semiconductor Device Physics, S. M. Sze, New York 1997, pp.343-407
  • 8
    • 0039870787 scopus 로고
    • Control of millimeter wave properties of high efficiency double drift region IMPATTs through enhancement of saturation current
    • May
    • N Mazumder and S. K. Roy, "Control of millimeter wave properties of high efficiency double drift region IMPATTs through enhancement of saturation current", Phy.Status Solidi (a), vol. 137, pp. 267-275, May 1993.
    • (1993) Phy.Status Solidi (a) , vol.137 , pp. 267-275
    • Mazumder, N.1    Roy, S.K.2
  • 9
    • 34748916127 scopus 로고    scopus 로고
    • Development of Silicon Carbide IMPATT oscillators
    • Ph.D. thesis, Purdue University
    • L. Yuan, "Development of Silicon Carbide IMPATT oscillators", Ph.D. thesis, Purdue University, 2000.
    • (2000)
    • Yuan, L.1
  • 10
    • 34748844304 scopus 로고    scopus 로고
    • Optically illuminated 4H-SiC terahertz IMPATT device
    • unpublished
    • M. Mukherjee and N. Mazumder, "Optically illuminated 4H-SiC terahertz IMPATT device", unpublished.
    • Mukherjee, M.1    Mazumder, N.2
  • 11
    • 34748842945 scopus 로고
    • A study on the role of reverse saturation current on the high frequency performance of millimeter wave double drift Si IMPATTs
    • India, 19-27 December, New Delhi, India: Tata McGraw-Hill pp
    • N. Mazumder and S. K. Roy, "A study on the role of reverse saturation current on the high frequency performance of millimeter wave double drift Si IMPATTs", Proceedings of the International Conference on Millimeter waves and Microwaves (ICOMM-90), DEAL, Dehradun, India, 19-27 December 1990 (New Delhi, India: Tata McGraw-Hill) pp. 135-137
    • (1990) Proceedings of the International Conference on Millimeter waves and Microwaves (ICOMM-90), DEAL, Dehradun , pp. 135-137
    • Mazumder, N.1    Roy, S.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.