Electrical stress effect on Josephson tunneling through ultrathin AlOx barrier in Nb/Al/ AlOx /Nb junctions

Journal of Applied Physics

Volumn 104, Issue 6, 2008, Pages

  Tolpygo, Sergey K ^a,b,c   Amparo, Denis ^b  

^a HYPRES INC   (United States)

^b STONY BROOK UNIVERSITY   (United States)

^c Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54749114872     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977725     Document Type: Article

References (45)

1. R. Degraeve, G. Groeseneken, R. Bellens, J. Ogier, M. Depas, P. Roussel, and H. Maes, IEEE Trans. Electron Devices 0018-9383 10.1109/16.662800 45, 904 (1998).
2. W. J. Chang, M. P. Houng, and Y. H. Wang, J. Appl. Phys. 0021-8979 10.1063/1.1367399 89, 6285 (2001).
3. M. Alam, B. Weir, and P. Silverman, IEEE Trans. Electron Devices 0018-9383 10.1109/16.981212 49, 232 (2002).
4. M. Alam, B. Weir, and P. Silverman, IEEE Trans. Electron Devices 0018-9383 10.1109/16.981213 49, 239 (2002).
5. K. Shimazawa, N. Kasahara, J. J. Sun, S. Araki, H. Morita, and M. Matsuzaki, J. Appl. Phys. 0021-8979 10.1063/1.373292 87, 5194 (2000).
6. J. Das, R. Degraeve, H. Boeve, P. Duchamps, L. Lagae, G. Groeseneken, G. Borghs, and J. De Boeck, J. Appl. Phys. 0021-8979 10.1063/1.1359227 89, 7350 (2001).
7. B. Oliver, G. Tuttle, Q. He, X. Tang, and J. Nowak, J. Appl. Phys. 0021-8979 10.1063/1.1636255 95, 1315 (2004).
8. K. Kim and B. K. Cho, Appl. Phys. Lett. 0003-6951 10.1063/1.1897846 86, 142106 (2005).
9. J. Akerman, M. DeHerrera, J. Slaughter, R. Dave, J. Sun, J. Martin, and S. Tehrani, IEEE Trans. Magn. 0018-9464 10.1109/TMAG.2006.879735 42, 2661 (2006).
10. R. M. Hill and L. A. Dissado, J. Phys. C 0022-3719 10.1088/0022-3719/16/ 11/017 16, 2145 (1983).
11. R. M. Hill and L. A. Dissado, J. Phys. C 0022-3719 10.1088/0022-3719/16/ 22/018 16, 4447 (1983).
12. J. W. McPherson and H. C. Mogul, J. Appl. Phys. 0021-8979 10.1063/1.368217 84, 1513 (1998).
13. A. W. Kleinsasser, F. M. Rammo, and M. Bhushan, Appl. Phys. Lett. 0003-6951 10.1063/1.108566 62, 1017 (1993).
14. R. E. Miller, W. H. Mallison, A. W. Kleinsasser, K. A. Delin, and E. M. Macedo, Appl. Phys. Lett. 0003-6951 10.1063/1.109697 63, 1423 (1993).
15. V. Patel and J. Lukens, IEEE Trans. Appl. Supercond. 1051-8223 10.1109/77.783721 9, 3247 (1999).
16. K. K. Likharev and V. K. Semenov, IEEE Trans. Appl. Supercond. 1051-8223 10.1109/77.80745 1, 3 (1991).
17. I. V. Vernik, D. E. Kirichenko, V. V. Dotsenko, R. Miller, R. J. Webber, P. Shevchenko, A. Talalaevskii, D. Gupta, and O. A. Mukhanov, Supercond. Sci. Technol. 20, S323 (2007). 0953-2048
18. S. K. Tolpygo, D. Yohannes, R. T. Hunt, J. A. Vivalda, D. Donnelly, D. Amparo, and A. F. Kirichencko, IEEE Trans. Appl. Supercond. 1051-8223 10.1109/TASC.2007.898571 17, 946 (2007).
19. W. Chen, A. V. Rylyakov, V. Patel, J. E. Lukens, and K. K. Likharev, Appl. Phys. Lett. 0003-6951 10.1063/1.122600 73, 2817 (1998).
20. S. K. Tolpygo, D. Amparo, A. Kirichenko, and D. Yohannes, Supercond. Sci. Technol. 0953-2048 10.1088/0953-2048/20/11/S09 20, S341 (2007).
21. S. K. Tolpygo and D. Amparo, J. Phys.: Conf. Ser. 1742-6588 10.1088/1742-6596/97/1/012227 97, 012227 (2008).
22. M. Konkin and J. Adler, J. Appl. Phys. 0021-8979 10.1063/1.327501 51, 5450 (1980).
23. HYPRES Niobium Integrated Circuit Fabrication Design Rules, Hypres, Inc., 2008, http://www.hypres.com/pages/download/designrules/DesignRules.pdf
24. M. Gurvitch, M. A. Washington, and H. A. Huggins, Appl. Phys. Lett. 0003-6951 10.1063/1.93974 42, 472 (1983).
25. S. Tolpygo, E. Cimpoiasu, X. Liu, N. Simonian, Y. Polyakov, J. Lukens, and K. Likharev, IEEE Trans. Appl. Supercond. 1051-8223 10.1109/TASC.2003.813655 13, 99 (2003).
26. E. Cimpoiasu, S. K. Tolpygo, X. Liu, N. Simonian, J. E. Lukens, K. K. Likharev, R. F. Klie, and Y. Zhu, J. Appl. Phys. 0021-8979 10.1063/1.1763229 96, 1088 (2004).
27. V. Ambegaokar and A. Baratoff, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.10.486 10, 486 (1963).
28. I. O. Kulik and A. N. Omel'yanchuk, Sov. Phys. JETP 21, 96 (1975). 0038-5646
29. I. O. Kulik and A. N. Omel'yanchuk, Sov. J. Low Temp. Phys. 0360-0335 4, 142 (1978).
30. G. B. Arnold, J. Low Temp. Phys. 0022-2291 10.1007/BF00681510 59, 143 (1985).
31. G. B. Arnold, J. Low Temp. Phys. 0022-2291 10.1007/BF00682620 68, 1 (1987).
32. A. W. Kleinsasser, R. E. Miller, W. H. Mallison, and G. B. Arnold, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.72.1738 72, 1738 (1994).
33. Y. Naveh, V. Patel, D. Averin, K. Likharev, and J. Lukens, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.85.5404 85, 5404 (2000).
34. W. H. Mallison, R. E. Miller, and A. W. Kleinsasser, IEEE Trans. Appl. Supercond. 5, 2330 (1995). 1051-8223
35. E. Tan, P. G. Mather, A. C. Perrella, J. C. Read, and R. A. Buhrman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.161401 71, 161401 (R) (2005).
36. J. W. Diggle, T. C. Downie, and C. W. Goulding, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr60259a005 69, 365 (1969).
37. M. J. Dignam and P. J. Ryan, Can. J. Chem. 0008-4042 10.1139/v68-090 46, 549 (1968).
38. P. Lamparter and R. Knieper, Physica B (Amsterdam) 234-236, 405 (1997). 0921-4526
39. C. Beenakker, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.67.3836 67, 3836 (1991).
40. D. Averin and A. Bardas, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 75.1831 75, 1831 (1995).
41. A. F. Andreev, Sov. Phys. JETP 19, 1228 (1964). 0038-5646
42. N. F. Mott, Trans. Faraday Soc. 0014-7672 10.1039/tf9474300429 43, 429 (1947).
43. N. Cabrera and N. F. Mott, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/12/1/308 12, 163 (1949).
44. M. Hidaka, S. Nagasawa, K. Hinode, and T. Satoh, IEICE Trans. Electron. 0916-8524 10.1093/ietele/e91-c.3.318 E91-C, 318 (2008).
45. K. Cheung, Plasma Charging Damage (Springer, Berlin, 2000).