Intrinsic reliability of AlOx-based magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 42, Issue 10, 2006, Pages 2661-2663

  DeHerrera, M ^b   Slaughter, J M ^b   Dave, R ^b   Sun, J J ^b   Martin, J T ^b   Tehrani, S ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Dielectric breakdown; magnetic memories; magnetoresistive devices; reliability; tunneling

Indexed keywords

EID: 85008052579     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/TMAG.2006.879735     Document Type: Article

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