|
Volumn 89, Issue 11 I, 2001, Pages 6285-6293
|
Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss
|
Author keywords
[No Author keywords available]
|
Indexed keywords
|
EID: 0000843960
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1367399 Document Type: Article |
Times cited : (21)
|
References (22)
|