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Volumn 89, Issue 11 I, 2001, Pages 6285-6293

Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

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Indexed keywords


EID: 0000843960     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367399     Document Type: Article
Times cited : (21)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.