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Volumn 97, Issue 1, 2008, Pages

Fabrication process development for superconducting VLSI circuits: Minimizing plasma charging damage

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EID: 42149125488     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/97/1/012227     Document Type: Article
Times cited : (9)

References (18)
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  • 5
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    • Parametric testing of HYPRES supercondcuting integrated circuits fabrication process
    • Yohannes D, Kirichenko A, Sarwana S and Tolpygo SK 2007 Parametric testing of HYPRES supercondcuting integrated circuits fabrication process IEEE Trans. Appl. Supercond. 17 181-6
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    • Yohannes, D.1    Kirichenko, A.2    Sarwana, S.3    Tolpygo, S.K.4
  • 7
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    • Plasma process-induced damage to Josephson junctions in superconducting integrated circuits
    • Tolpygo SK, Amparo D, Kirichenko A and Yohannes D 2007 Plasma process-induced damage to Josephson junctions in superconducting integrated circuits Superond. Sci. Technol. to be published
    • (2007) Superond. Sci. Technol.
    • Tolpygo, S.K.1    Amparo, D.2    Kirichenko, A.3    Yohannes, D.4
  • 10
    • 0000323364 scopus 로고
    • Charging damage to gate oxides in an O2 magnetron plasma
    • 2 magnetron plasma J. Appl. Phys. 72 4865-71
    • (1992) J. Appl. Phys. , vol.72 , Issue.10 , pp. 4865-4871
    • Fang, S.1    McVittie2
  • 11
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    • Plasma-charging damage: A physical model
    • Cheung KP and Chang CP 1994 Plasma-charging damage: a physical model J. Appl. Phys. 75 4415-26
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  • 12
    • 2142685395 scopus 로고    scopus 로고
    • Modeling of oxide charging effects in plasma processing
    • En W, Linder BP and Cheung NW 1996 Modeling of oxide charging effects in plasma processing J. Vac. Sci. Technol. B 14 552-9
    • (1996) J. Vac. Sci. Technol. , vol.14 , Issue.1 , pp. 552-559
    • En, W.1    Linder, B.P.2    Cheung, N.W.3
  • 14
    • 1142280286 scopus 로고    scopus 로고
    • Two breakdown mechnisms in ultrathin alumina barrier magnetic tunnel junctions
    • Oliver B, Tuttle G, He Q, Tang X and Nowak J 2004 Two breakdown mechnisms in ultrathin alumina barrier magnetic tunnel junctions J. Appl. Phys. 95 1315-22
    • (2004) J. Appl. Phys. , vol.95 , Issue.3 , pp. 1315-1322
    • Oliver, B.1    Tuttle, G.2    He, Q.3    Tang, X.4    Nowak, J.5
  • 15
    • 31644449221 scopus 로고    scopus 로고
    • Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparision between tantalum and aluminum oxide
    • Jeliazova Y, Kayser M, Mildner B, Hassel AW and Diesing D 2006 Temperature stability of thin anodic oxide films in metal/insulator/metal structures: a comparision between tantalum and aluminum oxide Thin Solid. Films 500 330-35
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    • Jeliazova, Y.1    Kayser, M.2    Mildner, B.3    Hassel, A.W.4    Diesing, D.5
  • 16
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    • HYPRES Nb Process Design Rules (30-1000-4500 A/cm2) Process #03-10-45
    • HYPRES Nb Process Design Rules (30-1000-4500 A/cm2) Process #03-10-45. Available: http://www.hypres.com/pages/download/designrules/DesignRules.pdf
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    • Tolpygo SK, Amparo D and Vivalda JA 2007 Plasma charging damage to ultrathing oxide tunnel barriers at metal wiring layer depostion by dc magnetron sputtering to be published
    • (2007)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.