-
1
-
-
0026116572
-
RSFQ logic/memory family: A new Josepshon-junction technology for sub-terahertz-clock-frequency digital systems
-
Likharev KK and Semenov VK 1991 RSFQ logic/memory family: a new Josepshon-junction technology for sub-terahertz-clock-frequency digital systems IEEE Trans. Appl. Supercond. 1 3-28
-
(1991)
IEEE Trans. Appl. Supercond.
, vol.1
, Issue.1
, pp. 3-28
-
-
Likharev, K.K.1
Semenov, V.K.2
-
3
-
-
42149095212
-
-
Vernik IV, Kirichenko DE, Dotsenko VV, Miller R, Webber RJ, Shevchenko P, Talalaevskii A, Gupta D and Mukhanov OA 2007 2007 Cryocooled Wideband Digital Channelizing RF receiver based on low-pass ADC Extanded Abstracts of 11th Int. Superconductive Electronics Conf. (Washington DC, USA, 10-14 June) P-V01
-
(2007)
Cryocooled Wideband Digital Channelizing RF Receiver Based on Low-pass ADC
, pp. 01
-
-
Vernik, I.V.1
De, K.2
Dotsenko, V.V.3
Miller, R.4
Webber, R.J.5
Shevchenko, P.6
Talalaevskii, A.7
Gupta, D.8
Mukhanov, O.A.9
-
4
-
-
42149107083
-
-
Kameda Y, Hashimoto Y, Yorozu S, Terai H, Fujimaki A, Yoshikawa N, Hidaka M, Nagasawa S, Hinode K and Sato T 2007 2007 4×4 SFQ network switch prototype system demonstration and 10-Gbps bit-error-rate test Extanded Abstracts of 11th Int. Superconductive Electronics Conf. (Washington DC, USA, 10-14 June) P-B06
-
(2007)
4×4 SFQ Network Switch Prototype System Demonstration and 10-Gbps Bit-error-rate Test
, pp. 06
-
-
Kameda, Y.1
Hashimoto, Y.2
Yorozu, S.3
Terai, H.4
Fujimaki, A.5
Yoshikawa, N.6
Hidaka, M.7
Nagasawa, S.8
Hinode, K.9
Sato, T.10
-
10
-
-
0000323364
-
Charging damage to gate oxides in an O2 magnetron plasma
-
2 magnetron plasma J. Appl. Phys. 72 4865-71
-
(1992)
J. Appl. Phys.
, vol.72
, Issue.10
, pp. 4865-4871
-
-
Fang, S.1
McVittie2
-
11
-
-
36449008064
-
Plasma-charging damage: A physical model
-
Cheung KP and Chang CP 1994 Plasma-charging damage: a physical model J. Appl. Phys. 75 4415-26
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.9
, pp. 4415-4426
-
-
Kp, C.1
Chang, C.P.2
-
12
-
-
2142685395
-
Modeling of oxide charging effects in plasma processing
-
En W, Linder BP and Cheung NW 1996 Modeling of oxide charging effects in plasma processing J. Vac. Sci. Technol. B 14 552-9
-
(1996)
J. Vac. Sci. Technol.
, vol.14
, Issue.1
, pp. 552-559
-
-
En, W.1
Linder, B.P.2
Cheung, N.W.3
-
13
-
-
0041942603
-
Tunneling properties of barriers in Nb/Al/AlOx/Nb junctions
-
x/Nb junctions IEEE Trans. Appl. Supercond. 13 99-102
-
(2003)
IEEE Trans. Appl. Supercond.
, vol.13
, Issue.2
, pp. 99-102
-
-
Tolpygo, S.K.1
Cimpoiasu, E.2
Liu, X.3
Simonian, N.4
Polyakov, Y.A.5
Lukens, J.E.6
Likharev, K.K.7
-
14
-
-
1142280286
-
Two breakdown mechnisms in ultrathin alumina barrier magnetic tunnel junctions
-
Oliver B, Tuttle G, He Q, Tang X and Nowak J 2004 Two breakdown mechnisms in ultrathin alumina barrier magnetic tunnel junctions J. Appl. Phys. 95 1315-22
-
(2004)
J. Appl. Phys.
, vol.95
, Issue.3
, pp. 1315-1322
-
-
Oliver, B.1
Tuttle, G.2
He, Q.3
Tang, X.4
Nowak, J.5
-
15
-
-
31644449221
-
Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparision between tantalum and aluminum oxide
-
Jeliazova Y, Kayser M, Mildner B, Hassel AW and Diesing D 2006 Temperature stability of thin anodic oxide films in metal/insulator/metal structures: a comparision between tantalum and aluminum oxide Thin Solid. Films 500 330-35
-
(2006)
Thin Solid. Films
, vol.500
, Issue.1-2
, pp. 330-335
-
-
Jeliazova, Y.1
Kayser, M.2
Mildner, B.3
Hassel, A.W.4
Diesing, D.5
-
16
-
-
42149105851
-
-
HYPRES Nb Process Design Rules (30-1000-4500 A/cm2) Process #03-10-45
-
HYPRES Nb Process Design Rules (30-1000-4500 A/cm2) Process #03-10-45. Available: http://www.hypres.com/pages/download/designrules/DesignRules.pdf
-
-
-
-
18
-
-
42149105288
-
-
Tolpygo SK, Amparo D and Vivalda JA 2007 Plasma charging damage to ultrathing oxide tunnel barriers at metal wiring layer depostion by dc magnetron sputtering to be published
-
(2007)
-
-
Tolpygo, S.K.1
Amparo, D.2
Vivalda, J.A.3
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