A study of soft and hard breakdown-Part II: Principles of area, thickness, and voltage scaling

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 239-246

  Alam, Muhammad Ashraful ^a   Weir, Bonnie E ^a   Silverman, Paul J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

Hard breakdown; MOS devices; Reliability; Semiconductor device modeling; Soft breakdown

Indexed keywords

CIRCUIT THEORY; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ENERGY DISSIPATION; LEAKAGE CURRENTS; OXIDES; PERCOLATION (SOLID STATE); PROBABILITY DISTRIBUTIONS; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS; ULTRATHIN FILMS;

BREAKDOWN TRANSIENTS; CIRCUIT CONFIGURATION DEPENDENCE; HARD BREAKDOWN; PERCOLATION CONDUCTANCE; POWER DISSIPATION; RELAXED RELIABILITY; SOFT BREAKDOWN; VOLTAGE SCALING;

MOS DEVICES;

EID: 0036474952     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981213     Document Type: Article

References (10)

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6. 2 films: Occurrence characterization and reliability assessment method
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9. Differentiation between electric breakdowns dielectric breakdown in thin silicon oxides
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