Degradation and time dependent breakdown of stressed ferromagnetic tunnel junctions

Journal of Applied Physics

Volumn 89, Issue 11 II, 2001, Pages 7350-7352

  Das, J ^a   Degraeve, R ^a   Boeve, H ^a   Duchamps, P ^a   Lagae, L ^a   Groeseneken, G ^a   Borghs, G ^a   De Boeck, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1359227     Document Type: Article

References (9)

1. S. P. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Y. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, J. Appl. Phys. 85, 5828 (1999).
2. W. Oepts, H. J. Verhagen, R. Coehoorn, and W. J. M. de Jonge, J. Appl. Phys. 86, 3863 (1999).
3. Special issue on scaling limits of gate oxides, Semicond. Sci. Technol. 15, (2000).
4. L. Manchanda, W. H. Lee, J. E. Bower, F. H. Baumann, W. L. Brown, C. J. Case, R. C. Keller, Y. O. Kim, E. J. Laskowski, M. D. Morris, R. L. Opila, P. J. Silverman, T. W. Sorsch, and G. R. Weber, Tech. Dig. Int. Electron Devices Meet. 605 (1998).
5. D.- G. Park, H.-J. Cho, C. Lim, I.S. Yeo, J.-S. Roh, C-T. Kim, and J.-M. Hwang, VLSI Tech. Symp., 2000, p. 46.
6. M. K. Konkin and J. G. Adler, J. Appl. Phys. 51, 5450 (1980).
7. D. R. Wolters and J. F. Verwey, Instabilities in Silicon Devices (Elsevier, Amsterdam, 1986), Chap. 6, p. 332.
8. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices 45, 904 (1998).
9. J. Das et al., (to be published).