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Volumn 46, Issue 45-49, 2007, Pages
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Fabrication and memory effect of Zr nanocrystals embedded in ZrO 2 dielectric layer
a
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Author keywords
Flat band voltage; Nano floating gate memory; Sputtering deposition; Zirconium nanocrystal; Zirconium oxide
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Indexed keywords
CAPACITANCE;
DANGLING BONDS;
DATA STORAGE EQUIPMENT;
DIELECTRIC DEVICES;
FABRICATION;
HYSTERESIS;
HYSTERESIS LOOPS;
MAGNETIC MATERIALS;
MAGNETRON SPUTTERING;
MICROSCOPIC EXAMINATION;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALS;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
OXYGEN;
SPUTTER DEPOSITION;
ZIRCONIA;
ZIRCONIUM ALLOYS;
CAPPING LAYERS;
CLOCKWISE;
DIELECTRIC LAYERS;
ELECTRON TRAPPING;
FG MEMORIES;
FLAT-BAND VOLTAGE;
FLOATING GATE MEMORIES;
MEMORY EFFECTS;
MOS STRUCTURES;
NANO-FLOATING GATE MEMORY;
OXIDE LAYERS;
PROCESS USING;
RANGING;
SPUTTERING DEPOSITION;
SPUTTERING DEPOSITIONS;
SPUTTERING PROCESSES;
TUNNELING OXIDES;
ZIRCONIUM OXIDE;
ZIRCONIUM;
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EID: 54249144487
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.L1246 Document Type: Article |
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Times cited : (7)
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References (19)
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