Low temperature polycrystalline silicon thin film transistors flash memory with silicon nanocrystal dot

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 25-28, 2007, Pages

  Ichikawa, Kazunori ^a   Uraoka, Yukiharu ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a   Takahashi, Eiji ^b   Hayashi, Tsukasa ^b   Ogata, Kiyoshi ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Flash memory; Floating gate; High pressure vapor annealing; Low temperature poly Si TFT; Quantum effect; Si nanodot; System on panel (SOP); Thin film transistor (TFT)

Indexed keywords

ANNEALING; FLASH MEMORY; SEMICONDUCTOR QUANTUM DOTS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING GATE; HIGH-PRESSURE VAPOR ANNEALING; LOW TEMPERATURE POLY-SI TFT; SI NANODOT; SYSTEM ON PANEL (SOP);

POLYSILICON;

EID: 34547850449     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L661     Document Type: Article

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