Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 378-381

  Choi, Samjong ^a,b   Park, Byoungjun ^a   Kim, Hyunsuk ^a   Cho, Kyoungah ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITANCE; CHARGE CARRIERS; ELECTRIC POTENTIAL; HYSTERESIS; NANOSTRUCTURED MATERIALS; OXYGEN;

CAPACITANCE VERSUS VOLTAGE (C-V) CURVES; CHARGE STORAGE; NANOCRYSTALS; OXYGEN VACANCIES;

MOS CAPACITORS;

EID: 32844456004     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/029     Document Type: Article

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