Insitu observation of the formation dynamics of nanohelices

Materials Research Society Symposium Proceedings

Volumn 924, Issue , 2006, Pages 91-96

  Yeoh, Terence ^a   Mason, Maribeth ^a   Feinberg, Zack ^a   Leung, Martin ^a   Tasci, Mehmet ^b   Elarde, Victor ^b   Coleman, James J ^b  

^a AEROSPACE CORPORATION   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

CHIRAL NANOTUBES; FORMATION DYNAMICS; NANOHELICES;

NANOSTRUCTURED MATERIALS;

EID: 33947640433     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0924-z06-06     Document Type: Conference Paper

References (3)

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2. A. Vorob'ev, P. O. Voccaro, K. Kubota, T. Aida, T. Tokuda, T. Hayashi, Y. Sakano, J. Ohta, and M. Nunoshita, "SiGe/Si microtubes fabricated on a silicon-on-insulator substrate," Journal of Physics D: Applied Physics, vol. 36, pp. 71-73, 2003.
3. O. Schumacher, S. Mendach, H. Welsch, A. Schramm, C. Heyn, and W. Hansen, "Lithographically defined metal-semiconductor-hybrid nanoscrolls," Applied Physics Letters, vol. 86, pp. 143109, 2005.