Freestanding SiGe/Si/Cr and SiGe/Si/SixNy/Cr microtubes

Applied Physics Letters

Volumn 84, Issue 17, 2004, Pages 3391-3393

  Golod, S V ^a   Prinz, V Ya ^a   Wagli P ^b   Zhang, L ^c   Kirfel, O ^c   Deckhardt, E ^c   Glaus, F ^c   David, C ^c   Grutzmacher D ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b ETH ZURICH   (Switzerland)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CRYSTAL ORIENTATION; ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; REACTIVE ION ETCHING; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRESS;

HYBRID TUBES; MICROTUBES; PLANAR STRUCTURES; THERMAL EVAPORATION;

SEMICONDUCTING FILMS;

EID: 2542451059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1736317     Document Type: Article

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