A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Nanotechnology

Volumn 13, Issue 2, 2002, Pages 231-233

  Prinz, V Ya ^a   Chekhovskiy, A V ^a   Preobrazhenskii, V V ^a   Semyagin, B R ^a   Gutakovsky, A K ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE CRYSTALS;

SINGLE-CRYSTAL NANOTUBES;

NANOTUBES;

EID: 0036540966     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/2/319     Document Type: Article

References (8)