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Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2

(5) Akbar, Mohammad S a,b Moumen, Naim a Barnett, Joel a Sim, Johnny a Lee, Jack C b

a SEMATECH (United States)

b The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SILICATES; SURFACE TREATMENT; TITANIUM NITRIDE; ULTRATHIN FILMS; ZIRCONIA;

ATOMIC LAYER DEPOSITION (ALD); EFFECTIVE OXIDE THICKNESS (EOT); GATE PATTERNING; POSTDEPOSITION ANNEAL (PDA); SURFACE NITRIDATION;

MOSFET DEVICES;

EID: 17144386140 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1854194 Document Type: Article

Times cited : (11)

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