Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 101-105

  Balasubramanian, M ^a   Bera, L K ^a   Mathew, Shajan ^a   Balasubramanian, N ^a   Lim, Vanissa ^a   Joo, M S ^a   Cho, B J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Gate dielectrics; HfO2; High K; Wet etching

Indexed keywords

GATE DIELECTRICS; HFO2; HIGH-K; WET ETCHING;

CRYSTALLIZATION; ETCHING; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SURFACE ROUGHNESS; SURFACE STRUCTURE;

THIN FILMS;

EID: 4344653928     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.121     Document Type: Article

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