Formation of low-resistivity nickel silicide with high temperature stability from atomic-layer-deposited nickel thin film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2975-2979

  Do, Kwan Woo ^a   Yang, Chung Mo ^a   Kang, Ik Su ^a   Kim, Kyung Min ^a   Back, Kyoung Hum ^a   Cho, Hyun Ick ^a   Lee, Heon Bok ^a   Kong, Sung Ho ^a   Hahm, Sung Ho ^a   Kwon, Dae Hyuk ^b   Lee, Jong Hyun ^a   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Kyungil University   (South Korea)

Author keywords

Atomic layer deposition; Nickel disilicide; Nickel suicide; Sheet resistance

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; THIN FILMS;

ATOMIC LAYER DEPOSITION; NICKEL DISILICIDE; NICKEL SILICIDE; SHEET RESISTANCE;

NICKEL COMPOUNDS;

EID: 33646907975     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2975     Document Type: Article

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