A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 741-743

  Jang, Moongyu ^a   Kim, Yarkyeon ^a   Shin, Jaeheon ^a   Lee, Seongjae ^a   Park, Kyoungwan ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; ELECTRON TUNNELING; ERBIUM; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THERMIONIC EMISSION; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

DRAIN VOLTAGE; TUNNELING CURRENTS;

MOSFET DEVICES;

EID: 1242264268     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645665     Document Type: Article

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