Characteristics of DC magnetron sputtered ternary cobalt-nickel silicide thin films for ultra shallow junction devices

Microelectronic Engineering

Volumn 85, Issue 3, 2008, Pages 559-565

  Panda, D ^a   Dhar, A ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Annealing; Resistivity; Rutherford back scattering; Sputtering; Surface diffusion; Ternary cobalt nickel silicides

Indexed keywords

ANNEALING; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE DIFFUSION;

RESISTIVITY; RUTHERFORD BACK SCATTERING; SHALLOW JUNCTION DEVICES; TERNARY COBALT-NICKEL SILICIDES;

TERNARY ALLOYS;

EID: 38949153818     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.10.001     Document Type: Article

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