Formation of Ni germano-silicide on single crystalline Si 0.3Ge 0.7/Si

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 464-466

  Lin, C Y ^a   Chen, W J ^b   Lai, C H ^a   Chin, Albert ^a,d   Liu, J ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c United Microelectronics Cooperation   (Taiwan)

^d IEEE   (Taiwan)

Author keywords

Co; Ni; SiGe; Silicide

Indexed keywords

SOLID PHASE EPITAXY;

ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE CRYSTALS;

EID: 0036687166     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801288     Document Type: Article

References (13)

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