Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline-silicon interface

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 55-57

  Alberti, A ^a   La Via, F ^a   Rimini, E ^b  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; CAVITY DENSITY; CAVITY NUCLEATION; CAVITY SIZE; HETEROGENEOUS NUCLEATION AND GROWTH; NITROGEN DOSE; PARTIAL SATURATION; POLY-CRYSTALLINE SILICON; PROJECTED RANGE; SILICIDE LAYERS;

COALESCENCE; GRAIN BOUNDARIES; NUCLEATION; POLYSILICON; THERMODYNAMIC STABILITY;

SILICIDES;

EID: 79956012170     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1488697     Document Type: Article

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