Dominant factors in TDDB degradation of Cu interconnect

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1743-1750

  Noguchi, Junji ^a  

^a HITACHI LTD   (Japan)

Author keywords

Copper; Dielectric breakdown; Integrated circuit interconnections; Interface phenomena; Reliability; Surface treatment

Indexed keywords

COPPER; ELECTRIC CONNECTORS; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; RELIABILITY; SURFACE PHENOMENA; SURFACE TREATMENT;

COPPER INTERCONNECTS; INTEGRATED CIRCUIT INTERCONNECTIONS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN;

EID: 23344432269     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851849     Document Type: Article

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