Electrical instability of low-dielectric constant diffusion barrier film (a-SiC:H) for copper interconnect

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2375-2383

  Tsui, Bing Yue ^a,b   Fang, Kuo Lung ^a,b   Lee, Shyh Dar ^c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Silicon Integrated Systems group   (Taiwan)

Author keywords

Charge injection; Dielectric polarization; Silicon carbide

Indexed keywords

CARRIER INJECTION MODEL; COPPER INTERCONNECT; DIELECTRIC DIFFUSION BARRIER; DIELECTRIC POLARIZATION MODEL; POLARITY; SCHOTTKY EMISSION PROCESS;

AMORPHOUS FILMS; ATOMS; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; NITROGEN; PERMITTIVITY; POLARIZATION; SILICON CARBIDE; THERMAL EFFECTS;

DIELECTRIC DEVICES;

EID: 0035472064     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954480     Document Type: Article

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