On the temperature dependence of NBTI recovery

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1178-1184

  Aichinger, T ^a   Nelhiebel, M ^b   Grasser, T ^c  

^a Kompetenzzentrum Automobil und Industrie Elektronik Gmbh   (Austria)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC HEATING ELEMENTS; FIELD EFFECT TRANSISTORS; HEATING; METAL RECOVERY; METALS; MOLECULAR BEAM EPITAXY; NEGATIVE TEMPERATURE COEFFICIENT; POLYSILICON; SILICON COMPOUNDS; SULFATE MINERALS; THERMODYNAMIC STABILITY; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

BIAS-TEMPERATURE INSTABILITY; COOL DOWN; EUROPEAN; IN-SITU HEATING; METAL-OXIDE SEMICONDUCTORS; MOS TRANSISTORS; NEGATIVE BIAS TEMPERATURE INSTABILITIES; ON-WAFER; P-CHANNEL; P-MOSFETS; PMOS TRANSISTORS; POLY RESISTORS; PRODUCTION LINES; RELIABILITY MONITORING; SELF-HEATING; SOLID STATE DEVICE RESEARCH CONFERENCE; STRESS-TEMPERATURE; TARGET TEMPERATURE; TEMPERATURE DEPENDENCES; TEST STRUCTURES; THIN OXIDES; TUNNELING CURRENTS;

MOSFET DEVICES;

EID: 50249092042     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.018     Document Type: Article

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