Reconsideration of hydrogen-related degradation mechanism in gate oxide

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 226-231

  Mitani, Y ^a   Yamaguchi, T ^a   Satake, H ^a   Toriumi, A ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Fluorine; Gate oxide; Hydrogen; Interface states; NBTI; Reliability; SILC; Trap creation

Indexed keywords

CHARGE TRANSFER; HOT CARRIERS; IMPACT IONIZATION; INTERFACES (MATERIALS); MOSFET DEVICES; SILICA; SUBSTRATES;

GATE OXIDES; INTERFACE STATES; SUBSTRATE HOT ELECTRON (SHE); TRAP CREATION;

GATE DIELECTRICS;

EID: 34548705452     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369896     Document Type: Conference Paper

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