Self-heating p-channel metal-oxide-semiconductor field-effect transistors for reliability monitoring of negative-bias temperature instability

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 12, 2007, Pages 7639-7642

  Kang, Ting Kuo ^a   Wang, Chi Shiun ^b   Su, Kuan Cheng ^b  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Carrier separation; Negative bias temperature instability; pMOSFETs; Reliability monitoring; Self heating

Indexed keywords

BIAS CURRENTS; RELIABILITY THEORY; TEMPERATURE CONTROL; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CARRIER SEPARATION; NEGATIVE-BIAS TEMPERATURE INSTABILITY; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI); RELIABILITY MONITORING (RM); SELF-HEATING;

MOSFET DEVICES;

EID: 37549047185     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7639     Document Type: Article

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