On the recovery of interface state in pMOSFETs subjected to NBTI and SHI stress

Solid-State Electronics

Volumn 52, Issue 2, 2008, Pages 264-268

  Wang, Yangang ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

Interface state; NBTI; Recovery; Substrate hole injection

Indexed keywords

INTERFACES (MATERIALS); RECOVERY; SILICON COMPOUNDS; STRESSES; THERMAL EFFECTS;

INTERFACE STATE; SUBSTRATE HOLE INJECTION;

MOSFET DEVICES;

EID: 38049083744     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.08.003     Document Type: Article

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