Thick GaN layers grown by HVPE: Influence of the templates

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3957-3963

  Ashraf, H ^a   Weyher, J L ^a,b   van Dreumel, G W G ^a   Gzregorzyck, A ^a   Hageman, P R ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. High resolution X ray diffraction (HR XRD); A1. Optical microscopy; A3. Hydride vapor phase epitaxy (HVPE); A3. Metal organic chemical vapor deposition (MOCVD); B1. Sapphire (Al2O3)

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; METALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; VAPORS;

A1. HIGH-RESOLUTION X-RAY DIFFRACTION (HR-XRD); A1. OPTICAL MICROSCOPY; A3. HYDRIDE VAPOR PHASE EPITAXY (HVPE); A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); B1. SAPPHIRE (AL2O3); GAN LAYERS; HYDRIDE VAPOR-PHASE EPITAXY; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE SUBSTRATES;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 49449107661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.031     Document Type: Article

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