Method for HVPE growth of thick crack-free GaN layers

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 473-478

  Dam, C E C ^a   Grzegorczyk, A P ^a   Hageman, P R ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A3. Hydride vapor phase epitaxy; A3. Metal organic chemical vapor deposition; B1. Gallium compounds; B2. Semiconducting gallium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; OPTICAL MICROSCOPY; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

2D GROWTH; BUFFER LAYER THICKNESS; GALLIUM TREATMENT STEP (GTS); HYDRIDE VAPOR PHASE EPITAXY (HVPE);

VAPOR PHASE EPITAXY;

EID: 33747754492     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.041     Document Type: Article

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