Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

Journal of Crystal Growth

Volumn 283, Issue 1-2, 2005, Pages 72-80

  Grzegorczyk, A P ^a   Hageman, P R ^a   Weyher, J L ^a,b   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Crystal morphology; A1. Crystal structure; A1. Defects; A1. Nucleation; A3. Chemical vapor deposition processes; A3. Metalorganic chemical vapor deposition

Indexed keywords

ANNEALING; COALESCENCE; CRYSTAL STRUCTURE; DEFECTS; EPITAXIAL GROWTH; GALLIUM; MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY;

CRYSTAL MORPHOLOGY; EPITAXIAL LAYER; INCLUSION DENSITY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 24144443776     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.05.072     Document Type: Article

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