In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg 0.06Zn0.94O films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2220-2225

  Koyama, T ^a   Ohmori, T ^a   Shibata, N ^a   Onuma, T ^a   Chichibu, S F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MAGNESIA; MAGNETIC FIELDS; MAGNETRON SPUTTERING; METALLIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

HELICON-WAVE-EXCITED PLASMA; MOLAR FRACTION; SPUTTERED PLUMES;

ZINC OXIDE;

EID: 4944239126     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1768522     Document Type: Conference Paper

References (48)

1. T. Takagi, H. Tanaka, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 42, L401 (2003).
2. J. F. Sarver, F. L. Katnack, and F. A. Hummel, J. Electrochem. Soc. 106, 960 (1959).
3. P. Yu, Z. Tang, G. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 2, p. 1453; Solid State Commun. 103, 459 (1997).
4. P. Yu, Z. Tang, G. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 2, p. 1453; Solid State Commun. 103, 459 (1997).
5. A. Ohtomo, M. Kawasaki, Y. Sakurai, Y. Yoshida, H. Koinuma, P. Yu, Z. Tang, G. Wong, and Y. Segawa, Mater. Sci. Eng., B 54, 24 (1998).
6. S. Choopun, R. Vispute, W. Noch, A. Balsamo, R. Sharma, T. Venkatesan, A. Iiadis, and D. C. Look, Appl. Phys. Lett. 75, 3947 (1999).
7. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 38, L2505 (1999); M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302-303, 140 (2001).
8. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 38, L2505 (1999); M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302-303, 140 (2001).
9. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998).
10. A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas, and O. W. Holland, Appl. Phys. Lett. 75, 3327 (1999).
11. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, and T. Venkatesan, Appl. Phys. Lett. 80, 1529 (2002).
12. J. Cook and F. Schetzina, J. Electron. Mater. 25, 855 (1996).
13. D. Bagnall, Y. Chen, Z. Zhu, T. Yao, S. Koyama, M. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997); 73, 1038 (1998).
14. D. Bagnall, Y. Chen, Z. Zhu, T. Yao, S. Koyama, M. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997); 73, 1038 (1998).
15. K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki, J. Cryst. Growth 209, 526 (2000); P. Fons, K. Iwata, S. Niki, A. Yamada, K. Matsubara, and M. Watanabe, ibid. 209, 532 (2000).
16. K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki, J. Cryst. Growth 209, 526 (2000); P. Fons, K. Iwata, S. Niki, A. Yamada, K. Matsubara, and M. Watanabe, ibid. 209, 532 (2000).
17. P. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki, K. Nakaha, T. Tanabe, and H. Takasu, Appl. Phys. Lett. 77, 1801 (2000); J. Cryst. Growth 227/228, 911 (2001).
18. P. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki, K. Nakaha, T. Tanabe, and H. Takasu, Appl. Phys. Lett. 77, 1801 (2000); J. Cryst. Growth 227/228, 911 (2001).
19. Nakahara, H. Takasu, P. Fons, K. Iwata, A. Yamada, K. Matsubara, R. Hunger, and S. Niki, J. Cryst. Growth 227/228, 923 (2001).
20. K. Ogata, K. Koike, T. Tanite, T. Komuro, F. Yan, S. Sasa, M. Inoue, and M. Yano, J. Cryst. Growth 251, 623 (2003).
21. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 36, L1453 (1997).
22. S. Muthukumar, J. Zhong, Y. Chen, and Y. Lu, Appl. Phys. Lett. 82, 742 (2003).
23. K. Ogata, T. Kawanishi, K. Maejima, K. Sakurai, S. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 40, L657 (2001).
24. W. I. Park, G. C. Yi, and H. M. Jang, Appl. Phys. Lett. 79, 2022 (2001).
25. T. Minemoto, T. Negami, S. Nishiwaki, H. Takakura, and Y. Hamakawa, Thin Solid Films 372, 173 (2000).
26. K. Yamaya, Y. Yamaki, H. Nakanishi, and S. Chichibu, Appl. Phys. Lett. 72, 235 (1998).
27. F. Chen, Plasma Phys. Controlled Fusion 33, 339 (1991); J. Vac. Sci. Technol. A 10, 1389 (1992).
28. F. Chen, Plasma Phys. Controlled Fusion 33, 339 (1991); J. Vac. Sci. Technol. A 10, 1389 (1992).
29. R. Boswell, Proceedings of the 21st International Conference on Phenomena in Ionized Gases, edited by G. Ecker, U. Arendt, J. Boseler, and A. Brunn (Arbeitsgemeinschaft Plasma Physik, Bochum, 1993).
30. T. Nakano, K. Giapis, R. Gottscho, T. Lee, and N. Sadeghi, J. Vac. Sci. Technol. B 11, 2046 (1993).
31. H. Sugai, Oyo Buturi 63, 559 (1994) [in Japanese].
32. S. F. Chichibu, T. Yoshida, T. Onuma, and H. Nakanishi, J. Appl. Phys. 91, 874 (2002).
33. T. Koyama, T. Onuma, and S. F. Chichibu, Appl. Phys. Lett. 83, 2973 (2003).
34. T. Shibata, K. Asai, Y. Nakamura, M. Tanaka, K. Kaigawa, J. Shibata, and H. Sakai, J. Cryst. Growth 229, 63 (2001); T. Shibata, Y. Kida, H. Miy ake, K. Hiramatsu, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda, Proceedings of the 28th International Symposium on Compound Semiconductors (University of Tokyo, Japan, 2001), TuP-30.
35. T. Shibata, K. Asai, Y. Nakamura, M. Tanaka, K. Kaigawa, J. Shibata, and H. Sakai, J. Cryst. Growth 229, 63 (2001); T. Shibata, Y. Kida, H. Miy ake, K. Hiramatsu, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda, Proceedings of the 28th International Symposium on Compound Semiconductors (University of Tokyo, Japan, 2001), TuP-30.
36. T. Onuma, S. F. Chichibu, T. Sola, K. Asai, S. Sumiya, T. Shibata, and M. Tanaka, Appl. Phys. Lett. 81, 652 (2002).
37. C. E. Moore, Atomic Energy Levels (Government Printing Office Washington, D.C., 1949); G. Herzberg, Molecular Spectra and Molecular Structure (Van Nostrand, New York, 1967).
38. C. E. Moore, Atomic Energy Levels (Government Printing Office Washington, D.C., 1949); G. Herzberg, Molecular Spectra and Molecular Structure (Van Nostrand, New York, 1967).
39. F. Claeyssens, A. Cheesman, S. J. Henley, and M. N. R. Ashfold, J. Appl. Phys. 92, 6886 (2002); Y. Chen, D. M. Bagnall, H. Koh, K. Park, K. Hiraga, Z. Zhu, and T. Yao, ibid. 84, 3912 (1998).
40. F. Claeyssens, A. Cheesman, S. J. Henley, and M. N. R. Ashfold, J. Appl. Phys. 92, 6886 (2002); Y. Chen, D. M. Bagnall, H. Koh, K. Park, K. Hiraga, Z. Zhu, and T. Yao, ibid. 84, 3912 (1998).
41. T. Koyama and S. F. Chichibu, J. Appl. Phys. 95, 7856 (2004).
42. J. Narayan, K. Dovidenko, A. K. Sharma, and. S. Oktyabrsky, J. Appl. Phys. 84, 2597 (1998).
43. M. Sumiya, M. Tanaka, K. Ohtsuka, S. Fuke, T. Ohnishi, I. Ohkubo, M. Yoshimoto, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 674 (1999).
44. M. Sumiya, K. Yoshimura, T. Ito, K. Ohtsuka, S. Fuke, K. Mizuno, M. Yoshimoto, H. Koinuma, A. Ohtomo, and M. Kawasaki, J. Appl. Phys. 88, 1158 (2000).
45. T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett. 72, 824 (1998).
46. S. F. Chichibu, A. Tsukazaki, M. Kawasaki, K. Tamura, Y. Segawa, T. Sota, and H. Koinuma, Appl. Phys. Lett. 80, 2860 (2002).
47. S. F. Chichibu, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, and S. Niki, Jpn. J. Appl. Phys., Part 2 41, L935 (2002).
48. E. F. Schubert, E. O. Göbel, Y. Horikoshi, K. Ploog, and H. J. Queisser, Phys. Rev. B 30, 813 (1984).