Uniaxial locked growth of high-quality epitaxial ZnO films on (1 1 2̄ 0)α-Al2O3

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 532-536

  Fons, P ^a   Iwata, K ^a   Niki, S ^a   Yamada, A ^a   Matsubara, K ^a   Watanabe, M ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; LATTICE CONSTANTS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY; ZINC OXIDE;

HETEROEPITAXY; RECIPROCAL SPACE MAPPING;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0034140030     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00614-4     Document Type: Article

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3. Fons P., Iwata K., Niki S., Yamada A., Matsubara K. J. Cryst. Growth. 201-202:1999;627.
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