Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 652-654

  Onuma, T ^a   Chichibu, S F ^a   Sota, T ^b   Asai, K ^c   Sumiya, S ^c   Shibata, T ^c   Tanaka, M ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; BOHR RADIUS; CHARACTERISTIC TEMPERATURE; EXCITON RESONANCES; EXCITON SPECTRA; EXCITON TRANSITIONS; EXCITONIC EMISSION; LONGITUDINAL OPTICAL PHONON ENERGIES; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; MULTIPLE INTERNAL REFLECTIONS; OPTICAL REFLECTANCE; PHOTON ENERGY; SAPPHIRE SUBSTRATES; SPECTRAL LINE SHAPE;

CATHODOLUMINESCENCE; EPITAXIAL FILMS; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION; SAPPHIRE; SPECTROSCOPY; VAPORS;

EPITAXIAL GROWTH;

EID: 79956025709     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493666     Document Type: Article

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