Studies of GaN layers grown on sapphire using an RF-source

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 117-121

  Andersson, T G ^a,b   Nozawa, K ^a   Horikoshi, Y ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; PYROMETERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031147001     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01221-3     Document Type: Article

References (16)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
2. C. Trager-Cowan, K.P. O'Donnell, S.E. Hooper and C.T. Foxon, Appl. Phys. Lett. 68 (1996) 355.
3. T. Sasaki and S. Zembutsu, J. Appl. Phys. 61 (1987) 2533.
4. D.E. Lacklison, J.W. Orton, I. Harrison, T.S. Chen, L.L. Jenkins, C.T. Foxon and S.E. Hooper, J. Appl. Phys. 78 (1995) 1838.
5. R.C. Powell, N.-E. Lee, Y.-W. Kim and J.E. Greene, J. Appl. Phys. 73 (1993) 189.
6. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Crystal Growth 98 (1989) 209.
7. K. Uchida, A. Watanabe, F. Yario, M. Kouguchi, T. Tanaka and S. Minagawa, J. Appl. Phys. 79 (1996) 3487.
8. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiaishi and K. Oki, J. Crystal Growth 115 (1991) 628.
9. W. Kim, Ö. Aktas, A.E. Botchkarev, A. Salvador, S.N. Mohammad and H. Morkoc, J. Appl. Phys. 79 (1996) 7657.
10. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10 (1992) 1237.
11. G.D. Chen, M. Smith, J.Y. Lin, H.X. Jiang, A. Salvador, B.N. Sverdlov, A. Botchkarev and H. Morkoc, J. Appl. Phys. 79 (1995) 2675.
12. B. Monemar, Late News Abstract at TWN 95 (Topical Workshop on III-V Nitrides) Nagoya, 1995.
13. K. Nozawa and Y. Horikoshi, Jpn. J. Appl. Phys. 32 (1993) 628.
14. M. Illegems, R. Dingle and R.A. Logan, J. Appl. Phys. 43 (1972) 3797.
15. J.I. Pankove, Mater. Res. Soc. Symp. Proc. 97 (1987) 409.
16. G.D. Chen, M. Smith, J.Y. Lin, H.X. Jiang, M. Asif Khan and J.C. Sun, Appl. Phys. Lett. 67 (1995) 1653.