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Volumn 50, Issue 1-3, 1997, Pages 12-15
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Plasma assisted molecular beam epitaxy growth of GaN
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Author keywords
GaN; Growth temperatures; Molecular beam epitaxy
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Indexed keywords
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR GROWTH;
STOICHIOMETRY;
THERMAL EFFECTS;
X RAY DIFFRACTION ANALYSIS;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0002471067
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(97)00200-6 Document Type: Article |
Times cited : (20)
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References (17)
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