Self-transducing silicon nanowire electromechanical systems at room temperature

Nano Letters

Volumn 8, Issue 6, 2008, Pages 1756-1761

  He, Rongrui ^a   Feng, X L ^b   Roukes, M L ^b   Yang, Peidong ^a,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX PATTERNING; DISPLACEMENT TRANSDUCERS; ELECTRO-MECHANICAL SYSTEMS; ELECTRONIC ACTUATIONS; ELECTRONIC READOUTS; INTEGRATED TRANSDUCERS; MASS SENSITIVITIES; MECHANICAL DEVICES; METALLIZATION; MONOLITHIC INTEGRATIONS; MULTI LAYERS; NANO-ELECTRO-MECHANICAL SYSTEMS; NANO-SCALE; ON CHIPS; PIEZORESISTANCE EFFECTS; RESONANT MOTIONS; ROOM TEMPERATURES; SECOND ORDERS; SI NANOWIRES; SILICON NANOWIRES; THIN WIRES; TIME-VARYING; TRANSDUCING; VERY HIGH FREQUENCIES;

ELECTROMECHANICAL DEVICES; MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; NANOWIRES; WIRE;

PIEZOELECTRIC TRANSDUCERS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; MECHANICS; MOTION; NANOTECHNOLOGY; PARTICLE SIZE; TEMPERATURE; TRANSDUCER; ULTRASTRUCTURE;

ELECTRIC IMPEDANCE; ELECTRIC WIRING; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MECHANICS; MOTION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; TEMPERATURE; TRANSDUCERS;

EID: 48449083960     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801071w     Document Type: Article

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