Copper CMP for dual damascene technology: Some considerations on the mechanism of Cu removal

Materials Research Society Symposium - Proceedings

Volumn 671, Issue , 2001, Pages

  Wei, David ^a   Gotkis, Yehiel ^a   Li, Hugh ^a   Jew, Stephen ^a   Li, Joseph ^a   Srivatsan, Sri ^a   Simon, Joseph ^a   Boyd, John M ^a   Ramanujam, K Y ^a   Kistler, Rodney ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; CHEMICAL MECHANICAL POLISHING; COMPOSITION EFFECTS; COPPER OXIDES; HYDROGEN BONDS; LIGHT POLARIZATION; OXIDATION; PASSIVATION; PH EFFECTS; SLURRIES; THERMODYNAMIC STABILITY;

COPPER DUAL DAMASCENE; REMOVAL RATE;

COPPER;

EID: 0035558858     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Fundamentals of Cu CMP for dual damascene technology
2. Characterization of Cu chemical mechanical polishing by electrochemical investigations
3. Chemical-mechanical polishing of copper and tantalum with silica abrasives