Thermoelectric devices using InN and Al1-xlnxN thin films prepared by reactive radio-frequency sputtering

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5344-5346

  Yamaguchi, Shigeo ^a,b   Izaki, Ryohei ^a   Kaiwa, Nakaba ^a   Sugimura, Satoshi ^a   Yamamoto, Atsushi ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC TEMPERATURE; ELECTRIC LOADS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONIC EQUIPMENT; HEATING; NITRIDES; SPUTTERING; SUBSTRATES; THERMOELECTRICITY; THIN FILMS;

IMPLANTABLE DEVICES; LOW-POWER ELECTRONICS; MICRO DEVICES; SEEBACK COEFFICIENTS;

THERMOELECTRIC EQUIPMENT;

EID: 3242700702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766400     Document Type: Article

References (9)

1. G. Mahan, B. Sales, and J. Sharp, Phys. Today 50, 42 (1997).
2. W. Shin, M. Murayama, K. Ikeda, and S. Sago, Jpn. J. Appl. Phys., Part 1 39, 1254 (2000).
3. S. Bhattacharya, A. L. Pope, R. T. Littleton, T. M. Tritt, V. Ponnambalam, Y. Xia, and S. J. Poon, Appl. Phys. Lett. 77, 2476 (2000).
4. S. Yamaguchi, Y. Iwamura, and A. Yamamoto, Jpn. J. Appl. Phys., Part 2 41, L1354 (2002).
5. S. Yamaguchi, Y. Iwamura, and A. Yamamoto, Appl. Phys, Lett. 82, 2065 (2003).
6. S. Yamaguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto, Appl. Phys. Lett. 83, 5398 (2003).
7. R. Izaki, Y. Iwamura, S. Yamaguchi, and A. Yamamoto, Proceedings of the 22nd International Conference on Thermoelectrics, La Grande-Motte, France, 2003, p. 380.
8. J. H. Edgar, Properties of Nitride Semiconductors (Inspec, New York, 1999).
9. Actually, the device is necessary to be set such that the higher temperature side of the device is contacted with the body while the lower temperature side of the device is at atmospheric temperature.