Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

Nanotechnology

Volumn 19, Issue 32, 2008, Pages

  Chin, Shu Cheng ^a   Chang, Yuan Chih ^a   Hsu, Chen Chih ^b   Lin, Wei Hsiang ^c   Wu, Chih I ^b   Chang, Chia Seng ^a   Tsong, Tien T ^a,c   Woon, Wei Yen ^d   Lin, Li Te ^d   Tao, Hun Jan ^d  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; ELECTROSTATICS; FETAL MONITORING; FIELD EFFECT TRANSISTORS; IMAGING TECHNIQUES; METALS; MICROSCOPIC EXAMINATION; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS; TWO DIMENSIONAL;

BURIED DOPANT; CANTILEVER PROBES; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); DEVICE CHARACTERIZATION; DEVICE STRUCTURES; DOPANT PROFILING; ELECTROSTATIC FORCE MICROSCOPY (EFM); FIELD EFFECT TRANSISTOR (FET); MULTI WALLED CARBON NANOTUBE (MWCNT); NANO SCALING; NANO TUBE; SCANNING TUNNELLING MICROSCOPY (STM); SINGLE WALLED CARBON NANOTUBE (SWCNTA); TIP APEX; TWO-DIMENSIONAL (2D); ULTRA-HIGH VACUUM (UHV);

CARBON NANOTUBES;

MULTI WALLED NANOTUBE; OXIDE;

ARTICLE; ELECTRIC POTENTIAL; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 47249118727     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/32/325703     Document Type: Article

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