Si/Al2O3/ZnO:Al capacitor arrays formed in electrochemically etched porous Si by atomic layer deposition

Microelectronic Engineering

Volumn 84, Issue 2, 2007, Pages 313-318

  Kemell, Marianna ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Ossei Wusu, Emmanuel ^b   Carstensen, Jürgen ^b   Föll, Helmut ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

Atomic layer deposition; Electrochemical etching; High aspect ratio capacitor; Macroporous silicon; Thin films

Indexed keywords

CAPACITORS; CELLULAR ARRAYS; ELECTROCHEMISTRY; ETCHING; THIN FILMS;

ATOMIC LAYER DEPOSITION; ELECTROCHEMICAL ETCHING; HIGH ASPECT RATIO CAPACITORS; MACROPOROUS SILICON; PLANAR CAPACITORS;

SILICON COMPOUNDS;

EID: 33846204785     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.085     Document Type: Article

References (24)

1. R.K. Ulrich, W. Schaper, in: Integrated Passive Components Technology, IEEE, 2003 (Chapter 1).
2. Ulrich R., and Schaper U. IEEE Spectrum July (2003) 26-30
3. Arbuckle B., Logan E., and Pedder D. Solid State Technol. 43 (2000) 84-86 88,90
4. Ulrich R. Circuit World 30 (2003) 20-24
5. Gill P., Miller M., and Nguyen B.Y. Microelectron. Eng. 56 (2001) 169-175
6. Linder C., Huegli A., and Friedli H. Solid State Technol. 46 (2003) 52-53 56
7. Farcy A., Torres J., Arnal V., Fayolle M., Feldis H., Jourdan F., Assous M., Di Maria J.L., and Vidal V. Microelectron. Eng. 70 (2003) 368-372
8. C. Thomason, L. Schaper, J. Morgan, S. Burkett, R. Ulrich, in: Proceedings of the 55th Electronic Components and Technology Conference, 2005, IEEE, pp. 779-782.
9. Black C.T., Guarini K.W., Zhang Y., Kim H., Benedict J., Sikorski E., Babich I.V., and Milkove K.R. IEEE Electron. Device Lett. 25 (2004) 622-624
10. Cai W.Z., and Shastri S. IEEE Electron. Device Lett. 25 (2004) 468-470
11. Lehmann V., Hönlein W., Reisinger H., Spitzer A., Wendt H., and Willer J. Thin Solid Films 276 (1996) 138-142
12. Roozeboom F., Elfrink R., Verhoeven J., van den Meerakker J., and Holthuysen F. Microelectron. Eng. 53 (2000) 581-584
13. J. Klootwijk, A. Kemmeren, R. Wolters, F. Roozeboom, J. Verhoeven, E. van den Heuvel, in: Defects in High-k Gate Dielectric Stacks, E. Gusev (Ed.), NATO Science Series II, Springer, 2005, pp. 17-28.
14. Föll H., Christophersen M., Carstensen J., and Hasse G. Mater. Sci. Eng. R 39 (2002) 93-141
15. Ritala M., and Leskelä M. In: Nalwa H.S. (Ed). Handbook of Thin Film Materials vol. 1 (2002), Academic Press, San Diego, CA 103-159
16. Leskelä M., and Ritala M. Angew. Chem. Int. Ed. 42 (2003) 5548-5554
17. Aaltonen T., Ritala M., Tung Y.-L., Chi Y., Arstila K., Meinander K., and Leskelä M. J. Mater. Res. 19 (2004) 3353-3358
18. For a more complete description of the etching setup, see: www.et-te.com (ET&TE Etch and Technology GmbH, Germany).
19. Suntola T. Thin Solid Films 216 (1992) 84-89
20. Ritala M., Leskelä M., Dekker J.-P., Mutsaers C., Soininen P.J., and Skarp J. Chem. Vapor Depos. 5 (1999) 7-9
21. H. Seidl, M. Gutsche, U. Schroeder, A. Birner, T. Hecht, S. Jakschik, J. Luetzen, M. Kerber, S. Kudelka, T. Popp, A. Orth, H. Reisinger, A. Saenger, K. Schupke, B. Sell, in: Proceedings of the IEDM, 2002, San Francisco, pp. 839-849.
22. Lujala V., Skarp J., Tammenmaa M., and Suntola T. Appl. Surf. Sci. 82/83 (1994) 34-40
23. Ha S.-C., Choi E., Kim S.-H., and Roh J.S. Thin Solid Films 476 (2005) 252-257
24. Ulrich R.K., Brown W.D., Ang S.S., Barlow F.D., Elshabini A., Lenihan T.G., Naseem H.A., Nelms D.M., Parkenson J., Schaper L.W., and Morcan G. IEEE Circuits Device September (2000) 17-25