Does strain engineering impact the gate stack quality and reliability?

ECS Transactions

Volumn 11, Issue 6, 2007, Pages 101-114

  Claeys, C ^a,b   Simoen, E ^a   Giusi, G ^c   Crupi, F ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HALL MOBILITY;

GATE OXIDE QUALITY; GATE STACK QUALITY; GLOBAL APPROACHES; HIGH-PERFORMANCE TECHNOLOGIES; LOW-FREQUENCY NOISE; RADIATION HARDNESS; STATE OF THE ART; STRAIN ENGINEERING;

HOLE MOBILITY;

EID: 45749088499     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2778369     Document Type: Conference Paper

References (29)

1. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, MT. Currie and A. Lochtefeld, J. Appl. Phys., 97, 011101-1 (2005).
2. C. Claeys and E. Simoen, Germanium-Based Technologies: From Materials to Devices, Elsevier, 2007.
3. G. Eneman, P. Verheyen, R. Rooyackers, F. Nouri, L. Washington, R. Schreutelkamp, V. Moroz, L. Smith, A. De Keersgieter, M. Jurczak and K. De Meyer, IEEE Trans. Electron Devices, 53, 1647 (2006).
4. K.-W. Ang, K.-J. Chui, V. Bliznetsov, Y. Wang, L.-Y. Wong, C.-H. Tung, N. Balasubramanian, M.-F. Li, G. Samudra and Y.-C. Yeo, in IEDM Tech. Dig., pp. 497-500, 2005.
5. K.-J. Chui, K.-W. Ang, N. Balasubramanian, M.-F. Li, G. S. Samudra and Y.-C. Yeo, IEEE Trans. Electron Devices, 54, 249 (2007).
6. C.-H. Chen, T.L. Lee, T.H. Hou, C.L. Chen, J.W. Hsu, K.L. Cheng, Y.-H. Chiu, H.J. Tao, Y. Jin, CH. Diaz, S.C. Chen and M.-S. Liang, in: Symp. On VLSI Technol. Dig. of Techn. Papers, The IEEE (New York), pp. 56-57 (2004).
7. C.-Y. Lu, H.-C. Lin and T.-Y. Huang, Ehctrochem. and Solid-St Lett., 9, G138 (2006).
8. C.-M. Lai, Y.-K. Fang and W.-K. Yeh, Jpn. J. Appl. Phys., 45, 3053 (2006).
9. C.-H, Liu and T.-M. Pan, IEEE Trans. Electron Devices, 54, 1799 (2007).
10. P. Su and J.-Y. Kuo, IEEE Trans. Electron Devices, 54, 649 (2007).
11. S. Maeda, Y.-S. Jin, J.-A. Choi, S.-Y. Oh, H.-W. Lee, J.-Y. Yoo, M.-C. Sun, J.-H. Ku, K.-W. Lee, S.-G. Bae, S.-G. Kang, J.-H. Yang, Y.-W. Kim and K.-P. Suh, in: Symp. On VLSI Technol. Dig. Of Techn. Papers, The IEEE (New York), pp. 102-103 (2004).
12. G. Giusi, E. Simoen, G. Eneman, P. Verhoyen, F. Crupi, K. De Meyer, C. Claeys and C. Ciofi, IEEE Electron Device Lett., 27, 508 (2006),
13. th Int. Conf on Solid-State and Integrated Circuit Techn., pp. 120-123 (2006).
14. B. Duriez, B. Tavel, F. Boeuf, MT. Basse, Y. Laplanche, C. Ortolland, D. Reber, F. Wacquant, P. Morin, D. Lenoble, R. Palla, M. Bidaud, D. Barge, C. Dachs, H. Brut, D. Roy, M. Marin, F. Payet, N. Cagnat, R. Difrenza, K. Rochereau, M. Denais, P. Stolk, M. Woo and F. Arnaud, in IEDM Tech. Dig., pp. 847-850 (2004).
15. G. Ghibaudo and T. Boutchacha, Microelectron, Reliab., 42, 572 (2002).
16. E. Simoen, P. Verheyen, A. Shickova, R. Loo and C. Claeys, IEEE Electron Device Lett. (submitted).
17. A. Shickova, B. Kaczer, P. Verheyen, G. Eneman, E. San Andres, M. Jurczak, P. Absil, H. Maes and G. Groeseneken, IEEE Electron Device Lett., 28, 242 (2007).
18. A. Shickova, B. Kaczer, E. Simoen, P. Verheyen, G. Eneman, M. Jurczak, P. Absil, H. Maes and G. Groeseneken, Microelectron. Engn., 9-10, 1906 (2007).
19. G. Giusi, F. Crupi, E. Simoen, G. Eneman and M. Jurczak, IEEE Trans. Electron Devices, 54, 78 (2007).
20. M. Kondo, N. Sugii, M. Miyamoto, Y. Hoshino, M. Hatori, W. Hirasawa, Y. Rimura, S. Rimura, Y. Kondo and I. Yoshida, IEEE Trans. Electron Devices, 53, 1226 (2006).
21. E. Simoen, G. Eneman, P. Verheyen, R. Loo, K. De Meyer and C. Claeys, IEEE Trans. Electron Devices, 53, 1039 (2006).
22. W.C. Hua, M.H. Lee, P.S. Chen, S. Maikap, C.W. Liu and K.M. Chen, IEEE Electron Dev. Lett., 25, 693 (2004).
23. M.-P. Lu, W.-C. Lee and M.-J. Chen, Appl. Phys. Lett., 88, 063511 (2006).
24. N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen and C. Claeys, submitted to IEEE Electron Dev. Lett.
25. A. Stesmans, D. Pierreux, R.J. Jaccodine, M.-T. Lin and T.J. Delph, Appl. Phys. Lett., 82, 3038 (2003).
26. A. Stesmans, P. Somers, V.V. Afanas'ev, C. Claeys and E. Simoen, Appl. Phys. Lett., 89, 152103 (2006).
27. R. Aigaby, A.G. O'Neill, S.H. Olson, E. Simoen and C. Claeys, unpublished.
28. A. Griffoni, S. Gerardin, A. Cester, A. Paccagnella, E. Simoen and C. Claeys, to be published in Proc. IEEE NSREC 2007 Conf. (in press).
29. S. Put, E. Simoen, E. Augendre, C. Claeys, M. Van Uffelen and P. Leroux, in Proc. RADECS Workshop 2006 (in press).